Hello TI!
I'm working on a project that will take the BOOSTXL-DRV8301 and beefing up the circuitry to handle higher currents. 55A will be the max and we've elected to use the Vishay SUM110N06-3m9H that is used on the higher current board (drv8301-69m-hit). What we've done so far is change the terminal blocks, FET footprints, sense resistor size and now we're curious if anything will need to be done with the DRV8301 GH/GL values. We are using a 20V LiFe battery as PVDD. Looking through the data sheets, we can see that VGS cannot exceed +/- 20V on either FET, which shouldn't be a problem here. I was reading the following conversation here: 
and it sounds like the DRV8301 is programmed to keep the Vgs within the required range as long as PVDD is an acceptable value.
So what I'm wondering is, can the DRV8301 that is configured for the BOOSTXL board, drive the gate of the Vishay FET under it's current configuration or will that part of the circuit need to be changed as well?
-Jim