Hi, the DRV8301 datasheet specifies that the bootstrap caps be sized at 0.1uF. However, I am driving five FETs per phase leg (30 in total), which means a larger total gate charge - about 250nC. In the datasheets for other gate drivers, I have seen formulae to calculate the required bootstrap capacitor values based on the total FET gate charge. As it stands now, with 0.1uF caps, the high Vgs only reaches about 8.2V in the on-state. As an experiment, albeit at a lower Vdd than I usually use, I tried doubling the bootstrap caps to 0.2uF and the high Vgs reached up to 9.2V. Is there any risk of damage to the DRV8301 by increasing these bootstrap caps, even up to say 0.5uF (the capacitance called for by one of those aforementioned formulae based on my gate charge)?
Thanks,
Ken.