To whom it may concern,
Since I got the equation of power dissipation of DRV10983, I post that as follows,
- Power dissipated in IC = Pcircuits + Pswitching + Pfets
- Pcircuits – power consumed by internal circuit
- Measure Vreg first and externally force Vreg pin to +0.5V to what you have measured
- Pcircuits = forced voltage * current from external supply.
- Pswitching – Switching loss
- Measure VCP pin voltage first and externally force VCP pin to +0.7V to what you have measured
- Pswitching = forced voltage * current from external supply
- Pfets – loss through Fets
- 3 x (Amplitude of phase current / sqrt(2) )^2 * Rdson (H+L)/2
- 3 is for three bridges
- I^2*R = Power loss on FET
- Rdson(H+L)/2 – Since phase current will be always going through either high side or low side not both at the same time.
- There are other loss but there are very small.
- Pcircuits – power consumed by internal circuit
By using this Pd and Tt which is package case top temperature measured by a thermocouple , we can estimate the junction temperature (Tj) of DRV10983.
Tj[℃] = Pd[W] * ΨJT[℃/W] + Tt[℃]
Where,
Tj: Device Junction Temperature
Tt: Package Case Top Temperature
ΨJT: Junction-to-Top Thermal Impedance
Pd: Device Power Dissipation
Thank you.
Best Regards,
Koshi Ninomiya