Hi
My customer will use DRV3201-Q1.
He has a question about Qg of FET for driving.
Could you tell me about the following question?
There is the following sentence in datasheet.
"Drives 6 Separate N-Channel Power MOSFETs up to 250 nC Gate Charge"
1. Can DRV3201-Q1 drive FET of Qg=600nC?
2. I think that Qg value which is able to drive is decided by switching speed and Max Iboost of Boost converter.
Is this idea correct?
3. How much is Max output current of Iboost?
4．I think that Max output current of Iboost is 200mA.
This was expected from mentioning of a data seat which is "ISW,fail Internal second level current limit" .
Is this guess proper?
Best regards
Shimizu